Per citar aquest document: http://ddd.uab.cat/record/115963
Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2012
Resum: A physics-based model for the surface potential and drain current for monolayertransition metal dichalcogenide (TMD) field-effect transistor is presented. Taking into account the two-dimensional (2D) density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Monolayers ; Transistors ; Field effect transistors ; Surface charge ; Capacitance ; Ballistic transport
Publicat a: Applied Physics Letters, Vol. 101, Issue 24 (December 2012) , p. 243501/1-243501/4, ISSN 1077-3118

DOI: 10.1063/1.4770313


5 p, 625.2 KB

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