Per citar aquest document:
Scopus: 22 cites, Web of Science: 26 cites,
Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
Cano, A. (European Synchrotron Radiation Facility)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2010
Resum: We revise the possibility of having an amplified surface potential in ferroelectricfield-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Field effect transistors ; Polarization ; Ferroelectric phase transitions ; Semiconductors ; Capacitance ; Surface charge
Publicat a: Applied Physics Letters, Vol. 97, Issue 13 (September 2010) , p. 133509/1-133509/3, ISSN 1077-3118

DOI: 10.1063/1.3494533

4 p, 407.4 KB

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