Per citar aquest document: http://ddd.uab.cat/record/116256
Resonant interband tunneling spin filter
Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory)
Cartoixà Soler, Xavier (California Institute of Technology. Laboratories of Applied Physics)
American Physical Society

Data: 2002
Resum: We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunnelingdiode as a spin filter. The interband design exploits large valence band spin–orbit interaction to provide strong spin selectivity, without suffering from fast hole spin relaxation. Spin filtering efficiency is also enhanced by the reduction of tunneling through quasibound states near the zone center, where spin spitting vanishes and spin selectivity is difficult. Our calculations show that, when coupled with an emitter or collector capable of lateral momentum selectivity, the asymmetric resonant interband tunnelingdiode can achieve significant spin filtering in conventional nonmagnetic semiconductor heterostructures under zero magnetic field.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Resonant tunneling ; III-V semiconductors ; Resonant tunneling diodes ; Magnetic semiconductors ; Semiconductor diodes ; Semiconductors ; Spin relaxation ; Strong interactions ; Tunneling ; Valence bands
Publicat a: Applied Physics Letters, Vol. 81, Issue 22 (November 2002) , p. 4198-4200, ISSN 1077-3118

DOI: 10.1063/1.1524700


4 p, 673.6 KB

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