Per citar aquest document: http://ddd.uab.cat/record/136865
Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Data: 2013
Resum: In this work, the temperature dependence of the resistive switching phenomenon in metal-oxide-semiconductor field-effect-transistor (MOSFETs) with an ultra-thin Hf-based high-k dielectric is studied through analysis of the gate and drain currents for the two dielectric conductivity states. These two different conductive states of the resistive switching have been associated with the dielectric breakdown (BD) and dielectric BD reversibility (R), respectively, and are related to the creation of a BD path through the dielectric that can be understood as a conductive filament. The results of the temperature dependence of the post-BD gate current are in agreement with those obtained from the study of the injected charge to recovery, which is a useful parameter with which to analyze the switch from the high to low conductivity state. The drain current in the MOSFETs for the two conductivity states, for different locations of the BD path along the channel (close to the source and close to the drain), and at several temperatures has also been studied. The results contribute to a better understanding of the resistive switching phenomenon in ultra-thin gate dielectrics. This contribution could be useful for the developing of models to describe BD reversibility.
Nota: Número d'acord de subvenció MICINN/TEC2010-16126
Nota: Número d'acord de subvenció MICINN/TEC2010-10021-E
Nota: Número d'acord de subvenció AGAUR/2009/SGR-783
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Dielectrics ; MOSFETs ; Electrical resistivity ; Dielectric thin films ; Electric measurements
Publicat a: Journal of Vacuum Science and Technology B, Vol. 31 (2013) , p. 22203-22203-5, ISSN 2166-2746

DOI: 10.1116/1.4789518


5 p, 1.0 MB

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 Registre creat el 2015-07-30, darrera modificació el 2016-06-20



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