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Página principal > Artículos > Artículos publicados > Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric |
Fecha: | 2011 |
Resumen: | The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD, the polarity of the BD-recovery stresses and the number of stress cycles are analyzed. |
Ayudas: | Ministerio de Ciencia e Innovación TEC2007-61294/MIC Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-783 |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió acceptada per publicar |
Materia: | Dielectric breakdown (BD) ; BD reversibility ; High-k ; Reliability ; Resistive switching ; CMOS |
Publicado en: | IEEE transactions on device and materials reliability, Vol. 11, Issue 1 (March 2011) , p. 126-130, ISSN 1530-4388 |
Post-print 6 p, 2.0 MB |