Home > Books and collections > Book chapters > A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation |
Date: | 2022 |
Abstract: | This paper addresses the automated parameter extraction of Random Telegraph Noise (RTN) models in nanoscale field-effect transistors. Unlike conventional approaches based on complex extraction of current levels and timing of trapping/de-Trapping events from individual defects in current traces, the proposed approach performs a simple processing of current traces. A smart optimization problem formulation allows getting distribution functions of the amplitude of the current shifts and of the number of active defects vs. Time. |
Grants: | Agencia Estatal de Investigación PID2019-103869RB-C31 Agencia Estatal de Investigación PID2019-103869RB-C32 |
Note: | Altres ajuts: grant US-1380876 funded by Consejería de Economía, Conocimiento, Empresas y Universidad de la Junta de Andalucía |
Rights: | Tots els drets reservats. |
Language: | Anglès |
Document: | Capítol de llibre ; recerca ; Versió acceptada per publicar |
Subject: | Modeling characterization ; RTN ; Time-dependent variability |
Published in: | 18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2022, ISBN 978-1-6654-6703-2 |
Available from: 2024-06-30 Postprint |