Home > Search Results: Aguirre, Fernando Leonel
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Articles, 8 records found
Articles 8 records found  
1.
20 p, 4.7 MB Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition / Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We investigate the use and performance of the quasi-static memdiode model (QMM) when incorporated into large cross-point arrays intended for pattern classification tasks. Following Chua's memristive devices theory, the QMM comprises two equations, one equation for the electron transport based on the double-diode circuit with single series resistance and a second equation for the internal memory state of the device based on the so-called logistic hysteron or memory map. [...]
2020 - 10.1109/ACCESS.2020.3035638
IEEE Access, Vol. 8 (November 2020) , p. 202174-202193  
Detailed record - Creative Commons
2.
5 p, 2.8 MB Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models / Miranda, Enrique (Universitat Autònoma de Barcelona) ; Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona) ; Salvador, E. (Universitat Autònoma de Barcelona) ; Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ; Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona)
The application of constant electrical stress to a metal-insulator-semiconductor (MOS) or metal-insulator-metal (MIM) structure can generate multiple breakdown events in the dielectric film. Very often, these events are detected as small jumps in the current-time characteristic of the device under test and can be treated from the stochastic viewpoint as a counting process. [...]
2023 - 10.1016/j.sse.2023.108812
Solid-state electronics, Vol. 210 (December 2023) , art. 108812  
Detailed record - Creative Commons
3.
12 p, 1.4 MB Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard / Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ; Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The ballistic conduction through narrow constrictions connecting charge reservoirs exhibits conductance quantization effects. Since the quantum of conductance (Formula presented. ) is only related to fundamental constants of nature, these effects might allow the implementation of a standard of resistance, fulfilling the requirements of the 2019 revised International System of Units. [...]
2023 - 10.1002/qute.202300048
Advanced Quantum Technologies, Vol. 6, Issue 7 (July 2023) , art. 2300048  
Detailed record - Creative Commons
4.
14 p, 7.1 MB Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks / Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Piros, Eszter (Technische Universität Darmstadt) ; Kaiser, Nico (Technische Universität Darmstadt) ; Vogel, Tobias (Technische Universität Darmstadt) ; Petzold, Stephan (Technische Universität Darmstadt) ; Gehrunger, Jonas (Technische Universität Darmstadt) ; Oster, Timo (Technische Universität Darmstadt) ; Hochberger, Christian (Technische Universität Darmstadt) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Alff, Lambert (Technische Universität Darmstadt) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this paper, the use of Artificial Neural Networks (ANNs) in the form of Convolutional Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode Model (DMM) to the conduction characteristics of bipolar-type resistive switching (RS) devices is investigated. [...]
2022 - 10.3390/mi13112002
Micromachines, Vol. 13, Issue 11 (November 2022) , art 2002  
Detailed record - Creative Commons
5.
18 p, 4.5 MB SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices / Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This paper reports the fundamentals and the SPICE implementation of the Dynamic Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching (RS) devices. Following Prof. [...]
2022 - 10.3390/mi13020330
Micromachines, Vol. 13, Issue 2 (February 2022) , art. 330  
Detailed record - Creative Commons
6.
24 p, 21.3 MB Assessment and improvement of the pattern recognition performance of memdiode-based cross-point arrays with randomly distributed stuck-at-faults / Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián M. (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Morell Pérez, Antoni (Universitat Autònoma de Barcelona. Departament de Telecomunicació i Enginyeria de Sistemes) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive crosspoint array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) intended for pattern recognition tasks is investigated by means of realistic SPICE simulations. [...]
2021 - 10.3390/electronics10192427
Electronics, Vol. 10, Issue 19 (October 2021) , art. 2427  
Detailed record - Creative Commons
7.
18 p, 2.9 MB Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional) ; Gomez, Nicolás M. (Universidad Tecnológica Nacional) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional) ; Palumbo, Félix (Universidad Tecnológica Nacional) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. [...]
2021 - 10.3390/jlpea11010009
Journal of low power electronics and applications, Vol. 11, Issue 1 (March 2021) , art. 9  
Detailed record - Creative Commons
8.
8 p, 3.6 MB Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. [...]
2019 - 10.1109/TED.2019.2922555
IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355  
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See also: similar author names
2 Aguirre, Francisco Javier
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