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Nondestructive multlple breakdown events in very thin SI02 films
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Farrés i Berenguer, Esteve (Universitat Autònoma de Barcelona. Departament de Física)
Placencia Millan, Iolanda (Universitat Autònoma de Barcelona. Departament de Física)
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física)
American Physical Society

Date: 1989
Abstract: Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant‐voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.
Rights: Tots els drets reservats.
Language: Anglès.
Document: article ; recerca ; publishedVersion
Subject: Thermal conduction ; Thermal conductivity ; Thermal effects
Published in: Applied Physics Letters, Vol. 55, Issue 2 (July 1989) , p. 128-130, ISSN 1077-3118

DOI: 10.1063/1.102396


4 p, 503.9 KB

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Articles > Research articles
Articles > Published articles

 Record created 2014-02-28, last modified 2019-02-03



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