Effects of high-field electrical stress on the conduction properties of ultra-thin La2O3 films
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Molina, J. (Tokyo Institute of Technology. Frontier Collaborative Research Center)
Kim, Y. (Tokyo Institute of Technology. Frontier Collaborative Research Center)
Iwai, H. (Tokyo Institute of Technology. Frontier Collaborative Research Center)
American Physical Society

Date:	2005
Abstract:	Electron transport in high-field stressed metal-insulator-silicon devices with ultrathin (<5nm) lanthanum oxide layers is investigated. We show that the leakage current flowing through the structure prior to degradation is direct and Fowler-Nordheimtunneling conduction, while that after stress exhibits diode-like behavior with series and parallel resistances. In this latter case, a closed-form expression for the current-voltage characteristic, based on the Lambert W function, is presented. Current evolution from one regime to the other during constant voltage stress takes place by means of discrete current steps of nearly identical magnitude, which would be indicative of the occurrence of multiple dielectric breakdowns across the insulating layer.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Ozone ; Tunneling ; Electrical resistivity ; Leakage currents ; Electrical properties ; Field emission ; Dielectric thin films ; Dielectrics ; Electronic transport ; Transport properties
Published in:	Applied physics letters, Vol. 86, Issue 23 (June 2005) , p. 232104/1-232104/3, ISSN 1077-3118

DOI: 10.1063/1.1944890

4 p, 232.3 KB

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