The role of the Fermi level pinning in gate tunable graphene-semiconductor junctions
Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Data:	2016
Resum:	Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to 10⁵. Such a large number is likely due to the realization of an ultra clean interface with virtually no interface trapped charge. However, it is indeed technologically relevant to know the impact that the interface trapped charges might have on the barristor's electrical properties. We have developed a physics based model of the gate tunable GS heterostructure where non-idealities such as Fermi Level Pinning (FLP) and a "bias dependent barrier lowering effect" has been considered. Using the model we have made a comprehensive study of the barristor's expected digital performance.
Ajuts:	European Commission 696656 Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R Ministerio de Economía y Competitividad TEC2012-31330 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384
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Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Barristor ; Fermi level pinning ; Graphene based devices ; Semiconductor device modelling ; Tunable Schottky barrier
Publicat a:	IEEE transactions on electron devices, Vol. 63, no. 11 (Nov. 2016) , p. 4521-4526, ISSN 1557-9646

DOI: 10.1109/TED.2016.2606139

Post-print 7 p, 2.4 MB

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