Conductance quantization in resistive random access memory - Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
 
Comments (0) | Reviews (0)
Start a discussion about any aspect of this document.

 Subscribe to this discussion. You will then receive all new comments by email.

Add comment


Once logged in, authorized users can also attach files.
Note: you have not defined your nickname.
N/D will be displayed as the author of this comment.
          You can use some HTML tags: <a href>, <strong>, <blockquote>, <br />, <p>, <em>, <ul>, <li>, <b>, <i>