Web of Science: 5 cites, Scopus: 5 cites, Google Scholar: cites
Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography
Menéndez Dalmau, Enric (Katholieke Universiteit te Leuven (1970- ))
Modarresi, Hiwa (Katholieke Universiteit te Leuven (1970- ))
Petermann, Claire (Katholieke Universiteit te Leuven (1970- ))
Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia)
Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia)
Liu, Haoliang (Katholieke Universiteit te Leuven (1970- ))
Kirby, Brian (Brian J.) (NNational Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica))
Mohd, Amir Syed (Jülich Centre for Neutron Science (Jülich, Alemanya))
Salhi, Zahir (Jülich Centre for Neutron Science (Jülich, Alemanya))
Babcock, Earl (Jülich Centre for Neutron Science (Jülich, Alemanya))
Mattauch, Stephan (Jülich Centre for Neutron Science (Jülich, Alemanya))
Van Haesendonck, Chris (Katholieke Universiteit te Leuven (1970- ))
Vantomme, André (Katholieke Universiteit te Leuven (1970- ))
Temst, Kristiaan (Katholieke Universiteit te Leuven (1970- ))

Data: 2017
Resum: The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1. 6 µm wide) and Co-CoO (2. 4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i. e. , current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i. e. , 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.
Nota: Altres ajuts: Research Foundation-Flanders (FWO) Fonds Wetenschappelijk Onderzoek, the Concerted Research Action GOA/14/007.
Nota: Número d'acord de subvenció MINECO/SEV-2013-0295
Nota: Número d'acord de subvenció EC/FP7/283883
Nota: Número d'acord de subvenció AGAUR/2014/SGR-1015
Drets: Tots els drets reservats.
Llengua: Anglès.
Document: article ; recerca ; acceptedVersion
Matèria: Ion implantation ; Lateral multilayers ; Lithography ; Magnetoresistance ; Planar technology
Publicat a: Small, Vol. 13 Núm. 11 (March 2017) , article 1603465, ISSN 1613-6829

DOI: 10.1002/smll.201603465


25 p, 1.6 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2018-07-09, darrera modificació el 2020-04-25



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