Valley-polarized quantum transport generated by gauge fields in graphene
Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering)
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Fecha:	2017
Resumen:	We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a 'resonance/anti-resonance' effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a e²/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.
Ayudas:	European Commission 696656 Ministerio de Economía y Competitividad FIS2015- 67767-P Ministerio de Economía y Competitividad SEV-2013-0295
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Graphene ; Quantum transport ; Strain deformations ; Theory ; Valley Hall effect
Publicado en:	2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006, ISSN 2053-1583

DOI: 10.1088/2053-1583/aa7cbd

Post-print 7 p, 4.6 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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