Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione)
Cresti, Alessandro (Université Grenoble Alpes)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Date: |
2018 |
Abstract: |
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I/I ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior. |
Rights: |
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Language: |
Anglès |
Document: |
Article ; recerca ; Versió publicada |
Subject: |
ION/IOFF ratio ;
Boron doping ;
Channel length ;
Graphene ribbon ;
Mobility gap ;
Transistor ;
Transport |
Published in: |
Materials, Vol. 11, issue. 5 (April 2018) , art. 667, ISSN 1996-1944 |
DOI: 10.3390/ma11050667
PMID: 29693612
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Record created 2019-03-01, last modified 2022-09-10