In-plane tunnelling field-effect transistor integrated on Silicon
Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia)
Apachitei, Geanina (University of Warwick. Department of Physics)
Preziosi, Daniele (Max Planck Institute of Microstructure Physics)
Deniz, Hakan (Max Planck Institute of Microstructure Physics)
Kriegner, Dominik (Charles University. Department of Condensed Matter Physics)
Martí Rovirosa, Xavier (Institute of Physics)
Alexe, Marin (University of Warwick. Department of Physics)

Data:	2015
Resum:	Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.
Ajuts:	European Commission 246102
Nota:	Altres ajuts: Beatriu de Pinós postdoctoral scholarship (2011 BP-A 00220 and 2011 BP-A_2 00014) from AGAUR-Generalitat de Catalunya
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Publicat a:	Scientific reports, Vol. 5 (September 2015) , art. 14367, ISSN 2045-2322

DOI: 10.1038/srep14367
PMID: 26403693

7 p, 721.1 KB

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