Web of Science: 2 citas, Scopus: 2 citas, Google Scholar: citas
Self-Assembled Nanofeatures in Complex Three-Dimensional Topographies via Nanoimprint and Block Copolymer Lithography Methods
Cummins, Cian (Trinity College Dublin)
Borah, Dipu (Trinity College Dublin)
Rasappa, Sozaraj (Tampere University of Technology)
Senthamaraikannan, Ramsankar (Trinity College Dublin)
Delgado Simao, Claudia (Institut Català de Nanociència i Nanotecnologia)
Francone, Achille (Institut Català de Nanociència i Nanotecnologia)
Kehagias, Nikolaos (Institut Català de Nanociència i Nanotecnologia)
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Morris, Michael A. (Trinity College Dublin)

Fecha: 2017
Resumen: Achieving ultrasmall dimensions of materials and retaining high throughput are critical fabrication considerations for nanotechnology use. This article demonstrates an integrated approach for developing isolated sub-20 nm silicon oxide features through combined "top-down" and "bottom-up" methods: nanoimprint lithography (NIL) and block copolymer (BCP) lithography. Although techniques like those demonstrated here have been developed for nanolithographic application in the microelectronics processing industry, similar approaches could be utilized for sensor, fluidic, and optical-based devices. Thus, this article centers on looking at the possibility of generating isolated silica structures on substrates. NIL was used to create intriguing three-dimensional (3-D) polyhedral oligomeric silsesquioxane (POSS) topographical arrays that guided and confined polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) BCP nanofeatures in isolated regions. A cylinder forming PS-b-PDMS BCP system was successfully etched using a one-step etching process to create line-space arrays with a period of 35 nm in confined POSS arrays. We highlight large-area (>6 μm) coverage of line-space arrays in 3-D topographies that could potentially be utilized, for example, in nanofluidic systems. Aligned features for directed self-assembly application are also demonstrated. The high-density, confined silicon oxide nanofeatures in soft lithographic templates over macroscopic areas illustrate the advantages of integrating distinct lithographic methods for attaining discrete features in the deep nanoscale regime.
Nota: Número d'acord de subvenció EC/FP7/245565
Nota: Número d'acord de subvenció MINECO/SEV-2013-0295
Nota: Número d'acord de subvenció MINECO/FIS2015-70862-P
Nota: This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.html
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; publishedVersion
Publicado en: ACS omega, Vol. 2, Issue 8 (August 2017) , p. 4417-4423, ISSN 2470-1343

DOI: 10.1021/acsomega.7b00781
PMID: 31457733

7 p, 1.4 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados

 Registro creado el 2019-07-26, última modificación el 2019-09-09

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