A solar transistor and photoferroelectric memory
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Lima, F. Anderson S. (Institut Català de Nanociència i Nanotecnologia)
Billon, Quentin (Institut Català de Nanociència i Nanotecnologia)
Shirley, Ian (Institut Català de Nanociència i Nanotecnologia)
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)

Date:	2018
Abstract:	This study presents a new self-powered electronic transistor concept "the solar transistor. " The transistor effect is enabled by the functional integration of a ferroelectric-oxide thin film and an organic bulk heterojunction. The organic heterojunction efficiently harvests photon energy and splits photogenerated excitons into free electron and holes, and the ferroelectric film acts as a switchable electron transport layer with tuneable conduction band offsets that depend on its polarization state. This results in the device photoconductivity modulation. All this (i. e. , carrier extraction and poling) is achieved with only two sandwiched electrodes and therefore, with the role of the gating electrode being taken by light. The two-terminal solar-powered phototransistor (or solaristor) thus has the added advantages of a compact photodiode architecture in addition to the nonvolatile functionality of a ferroelectric memory that is written by voltage and nondestructively read by light.
Grants:	European Commission 308023 Ministerio de Economía y Competitividad ENE2016-79282-C5-2-R Ministerio de Economía y Competitividad CTQ2016-81911-REDT Ministerio de Economía y Competitividad ENE2015-74275-JIN Ministerio de Economía y Competitividad SEV-2013-0295 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1212 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1216-F
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	Electron transport layers ; Ferroelectric photovoltaics ; Nonvolatile memory ; Organic bulk heterojunctions ; Phototransistors
Published in:	Advanced functional materials, Vol. 28, issue 17 (April, 2018) , art. 1707099, ISSN 1616-3028

DOI: 10.1002/adfm.201707099

Preprint 22 p, 452.7 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles