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The Role of polarity in nonplanar semiconductor nanostructures
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Zamani, Reza (École Polytechnique Fédérale de Lausanne. Interdisciplinary Center for Electron Microscopy)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Eickhoff, Martin (University of Bremen. Institut für Festkörperphysik)
Xiong, Qihua (Nanyang Technological University. School of Physical and Mathematical Sciences)
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Caroff, Philippe (Delft University of Technology)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)

Data: 2019
Resum: The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e. g. , electronic or photonic) and morphological features (e. g. , shape, growth direction, and so forth) also strongly depend on the polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very specific growth conditions. In addition, polar-directed growth affects the defect density and topology and might induce eventually the formation of undesirable polarity inversion domains in the nanostructure, which in turn will affect the photonic and electronic final device performance. Here, we present a review on the polarity-driven growth mechanism at the nanoscale, combining our latest investigation with an overview of the available literature highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polarity-driven growth mechanisms, as well as the polarity-related consequences on the physical properties of the nanostructures.
Ajuts: European Commission 823717
European Commission 654360
Ministerio de Economía y Competitividad ENE2017-85087-C3
Ministerio de Economía y Competitividad SEV-2017-0706
Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327
Nota: This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió publicada
Matèria: Polarity ; Semiconductor ; III−V ; II−VI ; Growth mechanisms ; Nanostructures ; Nanowires
Publicat a: Nano letters, Vol. 19, issue 6 (June 2019) , p. 3396-3408, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.9b00459
PMID: 31039314

13 p, 8.2 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2019-11-19, darrera modificació el 2022-09-14

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