Web of Science: 13 citations, Scopus: 13 citations, Google Scholar: citations
Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))

Date: 2019
Abstract: In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. 45 to 0. 65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.
Grants: European Commission 783176
Rights: Tots els drets reservats.
Language: Anglès
Document: Article ; recerca ; Versió acceptada per publicar
Published in: IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355, ISSN 1557-9646

DOI: 10.1109/TED.2019.2922555


Postprint
8 p, 3.6 MB

The record appears in these collections:
Articles > Research articles
Articles > Published articles

 Record created 2019-11-28, last modified 2022-09-03



   Favorit i Compartir