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Pàgina inicial > Articles > Articles publicats > Hybrid quantum anomalous Hall effect at graphene-oxide interfaces |
Data: | 2018 |
Resum: | Interfaces are ubiquitous in materials science, and in devices in particular. As device dimensions are constantly shrinking, understanding the physical properties emerging at interfaces is crucial to exploit them for applications, here for spintronics. Using first-principles techniques and Monte Carlo simulations, we investigate the mutual magnetic interaction at the interface between graphene and an antiferromagnetic semiconductor BaMnO3. We find that graphene deeply affects the magnetic state of the substrate, down to several layers below the interface, by inducing an overall magnetic softening, and switching the in-plane magnetic ordering from antiferromagnetic to ferromagnetic. The graphene-BaMnO3 system presents a Rashba gap 300 times larger than in pristine graphene, leading to a flavor of quantum anomalous Hall effect (QAHE), a hybrid QAHE, characterized by the coexistence of metallic and topological insulating states. These findings could be exploited to fabricate devices that use graphene to control the magnetic configuration of a substrate. |
Ajuts: | Ministerio de Economía y Competitividad RYC-2016-19344 European Commission 676598 Ministerio de Economía y Competitividad FIS2015-64886-C5-3-P Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-1506 Ministerio de Economía y Competitividad SEV-2013-0295 European Commission 653838 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió sotmesa a revisió |
Matèria: | Spintronics ; Topological insulators |
Publicat a: | Physical review B, Vol. 98, Issue 15 (October 2018) , art. 155404, ISSN 2469-9969 |
Preprint 14 p, 5.9 MB |