Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes
Petzold, S. (Technische Universität Darmstadt. Institute of Materials Science)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Sharath, S. U. (Technische Universität Darmstadt. Institute of Materials Science)
Muñoz Gorriz, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Vogel, Tobias (Technische Universität Darmstadt. Institute of Materials Science)
Piros, E. (Technische Universität Darmstadt. Institute of Materials Science.)
Kaiser, Nico (Technische Universität Darmstadt. Institute of Materials Science)
Eilhardt, R. (Technische Universität Darmstadt. Institute of Materials Science)
Zintler, A. (Technische Universität Darmstadt. Institute of Materials Science)
Molina-Luna, L. (Technische Universität Darmstadt. Institute of Materials Science)
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Alff, Lambert (Technische Universität Darmstadt. Institute of Materials Science)

Data:	2019
Resum:	In this work, analysis and simulation of all experimentally observed switching modes in hafnium oxide based resistive random access memories are carried out using a simplified electrical conduction model. To achieve switching mode variation, two metal-insulator-metal cells with identical stack combination, but varying oxygen stoichiometry of the hafnia layer, namely, stoichiometric vs highly deficient, are considered. To access the individual switching modes, the devices were subjected to a variety of cycling conditions comprising different voltage and current ranges. For modeling the device behavior, a single or two antiserially connected memdiodes (diode with memory) were utilized. In this way, successful compact simulation of unipolar, bipolar, threshold, and complementary resistive switching modes is accomplished confirming the coexistence of two switching mechanisms of opposite polarity as the basis for all observable switching phenomena in this material. We show that only calibration of the outer current-voltage loops with the memdiode model is necessary for predicting the device behavior in the defined region revealing additional information on the switching process. The correspondence of each memdiode device with the conduction characteristics of the individual top and bottom metal-oxide contacts allows one to assess the role played by each interface in the switching process separately. This identification paves the path for a future improvement of the device performance and functionality by means of appropriate interface engineering.
Ajuts:	European Commission 805359 European Commission 783176 Ministerio de Economía y Competitividad TEC2017-84321-C4-4-R
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Analysis and simulation ; Electrical conduction ; Interface engineering ; Metal insulator metals ; Oxygen stoichiometry ; Resistive random access memory ; Resistive switching ; Switching phenomenon
Publicat a:	Journal of applied physics, Vol. 125, issue 23 (June 2019) , art. 234503, ISSN 1089-7550

DOI: 10.1063/1.5094864

9 p, 2.6 MB

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