Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating
Russell, Stephen (University of Warwick. School of Engineering)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
McConville, Christopher F. (RMIT University. College of Science, Engineering and Health)
Fisher, Craig (University of Warwick. School of Engineering)
Hamilton, Dean P. (University of Warwick. School of Engineering)
Mawby, Philip A. (University of Warwick. School of Engineering)
Jennings, Mike (University of Warwick. School of Engineering)

Data:	2017
Resum:	A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	FET ; Gallium oxide ; Molecular beam epitaxy ; Normally-off ; Self-heating ; Silicon carbide ; Threshold voltag
Publicat a:	IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261, ISSN 2168-6734

DOI: 10.1109/JEDS.2017.2706321

Postprint 6 p, 657.0 KB

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