Unified RTN and BTI statistical compact modeling from a defect-centric perspective
Pedreira Rincon, Gerard (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla)
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Roca, Elisenda (Instituto de Microelectrónica de Sevilla)
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2021
Abstract:	In nowadays deeply scaled CMOS technologies, time-dependent variability effects have become important concerns for analog and digital circuit design. Transistor parameter shifts caused by Bias Temperature Instability and Random Telegraph Noise phenomena can lead to deviations of the circuit performance or even to its fatal failure. In this scenario extensive and accurate device characterization under several test conditions has become an unavoidable step towards trustworthy implementing the stochastic reliability models. In this paper, the statistical distributions of threshold voltage shifts in nanometric CMOS transistors will be studied at near threshold, nominal and accelerated aging conditions. Statistical modelling of RTN and BTI combined effects covering the full voltage range is presented. The results of this work suppose a complete modelling approach of BTI and RTN that can be applied in a wide range of voltages for reliability predictions.
Grants:	Agencia Estatal de Investigación TEC2016-75151-C3-R Agencia Estatal de Investigación PID2019-103869RB
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	CMOS ; BTI ; RTN ; Defects ; Modelling ; Characterization ; Reliability
Published in:	Solid-state electronics, Vol. 185 (November 2021) , p. 108112, ISSN 1879-2405

DOI: 10.1016/j.sse.2021.108112

Postprint 5 p, 521.8 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles