Stress-Induced In Situ Modification of Transition Temperature in VO Films Capped by Chalcogenide
Sakai, Joe (Institut Català de Nanociència i Nanotecnologia)
Kuwahara, Masashi (National Institute of Advanced Industrial Science and Technology)
Okimura, Kunio (Tokai University. Graduate School of Science and Technology)
Uehara, Yoichi (Tohoku University. Research Institute of Electrical Communication)

Data:	2020
Resum:	We attempted to modify the monoclinic-rutile structural phase transition temperature (T ) of a VO thin film in situ through stress caused by amorphous-crystalline phase change of a chalcogenide layer on it. VO films on C- or R-plane AlO substrates were capped by GeSbTe (GST) films by means of rf magnetron sputtering. T of the VO layer was evaluated through temperature-controlled measurements of optical reflection intensity and electrical resistance. Crystallization of the GST capping layer was accompanied by a significant drop in T of the VO layer underneath, either with or without a SiN diffusion barrier layer between the two. The shift of T was by ~30 °C for a GST/VO bilayered sample with thicknesses of 200/30 nm, and was by ~6 °C for a GST/SiN /VO trilayered sample of 200/10/6 nm. The lowering of T was most probably caused by the volume reduction in GST during the amorphous-crystalline phase change. The stress-induced in in situ modification of T in VO films could pave the way for the application of nonvolatile changes of optical properties in optoelectronic devices.
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Vanadium oxide ; Chalcogenide ; Insulator-metal phase transition ; Phase change material ; Strain engineering
Publicat a:	Materials, Vol. 13, Issue 23 (December 2020) , art. 5541, ISSN 1996-1944

DOI: 10.3390/ma13235541
PMID: 33291745

11 p, 17.0 MB

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