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Pàgina inicial > Articles > Articles publicats > Reducing charge noise in quantum dots by using thin silicon quantum wells |
Data: | 2023 |
Resum: | Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a 28 Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick 28 Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0. 29 ± 0. 02 μeV/Hz ½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to -gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system. Charge noise degrades the performance of spin qubits hindering scalability. Here the authors engineer the heterogeneous material stack in 28 Si/SiGe gate-defined quantum dots, to improve the scattering properties and to reduce charge noise. |
Ajuts: | European Commission 951852 Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00457 Ministerio de Ciencia e Innovación CEX2021-001214-S Agència de Gestió d'Ajuts Universitaris i de Recerca 2020/FI-00103 |
Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió publicada |
Matèria: | Quantum dots ; Spintronics |
Publicat a: | Nature communications, Vol. 14 (March 2023) , art. 1385, ISSN 2041-1723 |
Obra relacionada: | «Correction to : Reducing charge noise in quantum dots by using thin silicon quantum wells (Nature Communications, Vol. 14 (April 2023), art. 1921 https://doi.org/10.1038/s41467-023-37548-z |
9 p, 1.1 MB |