Home > Books and collections > Book chapters > Stochastic resonance effect in binary STDP performed by RRAM devices |
Date: | 2022 |
Description: | 4 pàg. |
Abstract: | The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses. |
Grants: | Agencia Estatal de Investigación PID2019-103869RB Agencia Estatal de Investigación TEC2017-90969-EXP |
Rights: | Tots els drets reservats. |
Language: | Anglès |
Document: | Capítol de llibre ; recerca ; Versió acceptada per publicar |
Subject: | Memristor ; Neuromorphic systems ; Resistive switching ; RRAM ; STDP ; Stochastic resonance |
Published in: | 2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022, p. 449-452, ISBN 978-1-6654-5226-7 |
Available from: 2024-12-30 Postprint |