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18 p, 697.7 KB

Mechanical tuning of LaAIO₃ SrTiO₃ interface conductivity / Sharma, P. (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Ryu, S. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Burton, J. D. (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Paudel, T. R. (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Bark, C. W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Huang, Z. (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Ariando, None (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Tsymbal, E. Y. (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Eom, C. B. (Department of Materials Science and Engineering, University of Wisconsin-Madison) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. [...]
2015 - DOI (Digital Object Identifier)

10.1021/acs.nanolett.5b01021
Nano letters, Vol. 15, issue 5 (May 2015) , p. 3547-3551

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21 p, 1.0 MB

High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - DOI (Digital Object Identifier)

10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874

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