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Pàgina inicial > Articles > Articles publicats > Integrated tunneling sensor for nanoelectromechanical systems |
Data: | 2006 |
Resum: | Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunnelingsensors. Based on this analysis, a tunnelingsensor is fabricated by Si micromachiningtechnology and its proper operation is demonstrated. |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió publicada |
Matèria: | Tunneling ; Electrodes ; Nanoelectromechanical systems ; Microelectromechanical systems ; Electrostatics ; Image sensors ; Infrared detectors ; Micromachining ; Silicon detectors ; Van der Waals forces |
Publicat a: | Applied physics letters, Vol. 89, Issue 17 (October 2006) , p. 173101/1-173101/3, ISSN 1077-3118 |
4 p, 332.8 KB |