A resonant spin lifetime transistor
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory)
Chang, Y. -C. (University of Illinois at Urbana-Champaign. Department of Physics)
American Physical Society

Data:	2003
Resum:	We present a device concept for a spintronictransistor based on the spin relaxation properties a two-dimensional electron gas(2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information.
Drets:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Electron gas ; Transistors ; Ferromagnetism ; Spintronic devices ; Ballistics ; Electron paramagnetic resonance spectroscopy ; Spin relaxation
Publicat a:	Applied physics letters, Vol. 83, Issue 7 (August 2003) , p. 1462-1464, ISSN 1077-3118

DOI: 10.1063/1.1601693

4 p, 313.5 KB

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