guest ::
login
UAB Digital Repository of Documents
Search
Submit
Help
Personalize
Your alerts
Your baskets
Your searches
Library Service
About DDD
Català
English
Español
Home
>
Articles
>
Published articles
>
Recovery of the MOSFET and circuit functionality after the dielectric breakdown of ultra-thin high-k gate stacks
>
Reviews
Information
Discussion (0)
Usage statistics
Recovery of the MOSFET and circuit functionality after the dielectric breakdown of ultra-thin high-k gate stacks
-
Crespo Yepes, Albert
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
;
Martin Martinez, Javier
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rothschild, A.
(Interuniversity Micro-Electronics Center) ;
Rodríguez Martínez, Rosana
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Comments
(0) |
Reviews (0)
Be the first to review this document.
Add review
Rate this article:
-Select a score-
***** (best)
****
***
**
* (worst)
Give a title to your review:
Write your review:
Note: you have not
defined your nickname
.
N/D
will be displayed as the author of this comment.
Similar records