Recovery of the MOSFET and circuit functionality after the dielectric breakdown of ultra-thin high-k gate stacks
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rothschild, A. (Interuniversity Micro-Electronics Center)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2010
Abstract:	The reversibility of the gate dielectric breakdown in ultra-thin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the BD recovery.
Grants:	Ministerio de Ciencia e Innovación TEC2007-61294 Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-783
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Dielectric breakdown ; Dielectric breakdown reversibility ; High-k ; Resistive switching ; CMOS circuits
Published in:	IEEE electron device letters, Vol. 31, Issue 6 (June 2010) , p. 543-545, ISSN 0741-3106

DOI: 10.1109/LED.2010.2045732

Post-print 3 p, 1.0 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles