Channel-Hot-Carrier degradation of strained MOSFETs : A device level and nanoscale combined approach
Wu, Qian (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Simoen, E. (IMEC. Belgium.)
Date: |
2015 |
Abstract: |
Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data. |
Grants: |
Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384
|
Rights: |
Tots els drets reservats. |
Language: |
Anglès |
Document: |
Article ; recerca ; Versió publicada |
Subject: |
MOSFETs ;
Electric currents ;
Strain measurement ;
Carrier mobility ;
Dielectrics |
Published in: |
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol. 33, Issue 2 (March 2015) , p. 22202, ISSN 2166-2754 |
DOI: 10.1116/1.4913950
The record appears in these collections:
Research literature >
UAB research groups literature >
Research Centres and Groups (research output) >
Engineering >
The Reliability of Electron Devices and Circuits group (REDEC) Articles >
Research articlesArticles >
Published articles
Record created 2016-07-21, last modified 2022-11-02