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Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy
Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München)
Hetzl, Martin (Technische Universität München. Walter Schottky Institute)
Weiszer, Saskia (Technische Universität München. Walter Schottky Institute)
Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute)
De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC))
Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Stutzmann, Martin (Technische Universität München. Walter Schottky Institute)
ALBA Laboratori de Llum de Sincrotró

Fecha: 2015
Resumen: In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.
Nota: Número d'acord de subvenció MINECO/MAT2014-51480-ERC
Nota: Número d'acord de subvenció AGAUR/2014/SGR-1638
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; acceptedVersion
Materia: GaN ; Molecular beam epitaxy ; Nanowires ; Polarity ; Proximity effects ; Selective area growth
Publicado en: Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779, ISSN 1530-6992

DOI: 10.1021/nl504446r

8 p, 9.3 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados

 Registro creado el 2018-12-17, última modificación el 2019-06-12

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