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Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione)
Cresti, Alessandro (Université Grenoble Alpes)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Date: 2018
Abstract: Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I/I ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.
Rights: Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. Creative Commons
Language: Anglès
Document: article ; recerca ; publishedVersion
Subject: ION/IOFF ratio ; Boron doping ; Channel length ; Graphene ribbon ; Mobility gap ; Transistor ; Transport
Published in: Materials, Vol. 11, issue. 5 (April 2018) , art. 667, ISSN 1996-1944

DOI: 10.3390/ma11050667
PMID: 29693612

12 p, 435.8 KB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles

 Record created 2019-03-01, last modified 2020-08-08

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