Ptsi clustering in silicon probed by transport spectroscopy
Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics)
Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics)
Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics)
De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics)
Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics)
Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
Cartoixà, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Data:	2014
Resum:	Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.
Ajuts:	European Commission 280043
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Atomistic simulations ; Characteristic size ; Contact material ; Discrete energies ; Quantum transport ; Schottky barriers ; Thermal annealing process ; Transport spectroscopy
Publicat a:	Physical Review, Vol. 3, issue. 4 (Dec. 2014) , art. e041025, ISSN 2160-3308

DOI: 10.1103/PhysRevX.3.041025

8 p, 743.4 KB

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