Web of Science: 22 cites, Scopus: 22 cites, Google Scholar: cites,
Quantum Hall effect in polycrystalline graphene : The role of grain boundaries
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Cresti, Alessandro (Université Grenoble Alpes)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Data: 2014
Resum: We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted by the polycrystalline morphology, requiring the magnetic length to be smaller than the average grain radius. The nature of localization is also found to be unusual, with strongly localized states at the center of Landau levels (including the usually highly robust zero-energy state) and extended electronic states lying between Landau levels. These extended states percolate along the network of grain boundaries, resulting in a finite value for the bulk dissipative conductivity and suppression of the quantized Hall conductance. Such breakdown of the quantum Hall regime provoked by extended structural defects is also illustrated through two-terminal Landauer-Büttiker conductance calculations, indicating how a single grain boundary induces cross linking between edge states lying at opposite sides of a ribbon geometry.
Ajuts: European Commission 604391
MINECO/MAT2012-33911
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió acceptada per publicar
Publicat a: Physical review B : Condensed matter and materials physics, Vol. 90, Issue 16 (October 2014) , art. 161401, ISSN 1550-235X

DOI: 10.1103/PhysRevB.90.161401


Postprint
7 p, 3.5 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2019-09-23, darrera modificació el 2021-08-07



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