Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
Zamani, Mahdi (École Polytechnique Fédérale de Lausanne)
Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Francaviglia, Luca (École Polytechnique Fédérale de Lausanne)
Güniat, Lucas (École Polytechnique Fédérale de Lausanne)
Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne)
Potts, Heidi A. (École Polytechnique Fédérale de Lausanne)
Friedl, Martin (École Polytechnique Fédérale de Lausanne)
Markov, Edoardo. (École Polytechnique Fédérale de Lausanne)
Kim, Wonjong (École Polytechnique Fédérale de Lausanne)
Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne)
Dubrovskii, Vladimir G. (ITMO University)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)

Data:	2018
Resum:	Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. Polarity engineering provides an additional pathway to modulate the structural and optical properties of semiconductor nanowires. In this work, we demonstrate for the first time the growth of Ga-assisted GaAs nanowires with (111)A-polarity, with a yield of up to ∼50%. This goal is achieved by employing highly Ga-rich conditions which enable proper engineering of the energies of A and B-polar surfaces. We also show that A-polarity growth suppresses the stacking disorder along the growth axis. This results in improved optical properties, including the formation of AlGaAs quantum dots with two orders or magnitude higher brightness. Overall, this work provides new grounds for the engineering of nanowire growth directions, crystal quality and optical functionality.
Ajuts:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327 Ministerio de Economía y Competitividad ENE2017-85087-C3-3-R Ministerio de Economía y Competitividad SEV-2013-0295 European Commission 654360
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Matèria:	Compound semiconductors ; Crystal qualities ; Ga-rich conditions ; Optical functionalities ; Semiconductor nanowire ; Stacking disorders ; Structural and optical properties ; Zinc-blende structures
Publicat a:	Nanoscale, Vol. 10, Issue 36 (September 2018) , p. 17080-17091, ISSN 2040-3372

DOI: 10.1039/c8nr05787g

Preprint 22 p, 2.5 MB

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