Web of Science: 2 citas, Scopus: 3 citas, Google Scholar: citas
A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
Li, Fan (University of Warwick)
Mawby, Philip A. (University of Warwick)
Song, Qiu (University of Warwick)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Shah, Vishal (University of Warwick)
Sharma, Yogesh (Dynex Semiconductor Ltd.)
Hamilton, Dean P. (De Montfort University)
Fisher, Craig (University of Warwick)
Gammon, Peter (University of Warwick)
Jennings, M.R. (Swansea University)

Fecha: 2020
Resumen: Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. Fowler-Nordheim (F-N) tunneling is observed above 7 MV/cm and an effective barrier height of 3. 7 eV is obtained, which is the highest known for native SiO layers grown on the semiconductor substrate. The observed dependence of the oxide reliability on the gate active area suggests that the oxide quality has not reached the intrinsic level. Three failure mechanisms were identified and confirmed by both medium-and long-term results. Although two of them are likely due to extrinsic defects from material quality and fabrication steps, the one dominating the high field (>8. 5 MV/cm) should be attributed to the electron impact ionization within SiO. At room temperature, the field acceleration factor is found to be ≈0. 906 dec/(MV/cm) for high fields, and the projected lifetime exceeds 10 years at 4. 5 MV/cm.
Nota: Número d'acord de subvenció EC/H2020/720827
Derechos: Tots els drets reservats.
Lengua: Anglès
Documento: article ; recerca ; submittedVersion
Materia: Logic gates ; Silicon ; Reliability ; Dielectrics ; MOSFET ; Annealing ; Substrates
Publicado en: IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242, ISSN 1557-9646

DOI: 10.1109/TED.2019.2954911

7 p, 2.6 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados

 Registro creado el 2020-05-15, última modificación el 2021-01-19

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