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Pàgina inicial > Articles > Articles publicats > Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode |
Data: | 2014 |
Resum: | Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge-and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO/FGNPA junction also drastically enhances TMR ratios up to ∼100%. |
Ajuts: | Ministerio de Economía y Competitividad MAT2012-33911 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Tunneling magnetoresistance |
Publicat a: | Applied physics letters, Vol. 105, issue 18 (Nov. 2014) , art. 183111, ISSN 1077-3118 |
Publicat 5 p, 1.1 MB |
Postprint 10 p, 800.8 KB |