Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode
Hashimoto, T. (Aoyama Gakuin University. Faculty of Science and Engineering)
Kamikawa, S. (Aoyama Gakuin University. Faculty of Science and Engineering)
Soriano, David (Institut Català de Nanociència i Nanotecnologia)
Pedersen, Jesper Goor (Institut Català de Nanociència i Nanotecnologia)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Haruyama, Junji (Aoyama Gakuin University. Faculty of Science and Engineering)

Data:	2014
Resum:	Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge-and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO/FGNPA junction also drastically enhances TMR ratios up to ∼100%.
Ajuts:	Ministerio de Economía y Competitividad MAT2012-33911
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Tunneling magnetoresistance
Publicat a:	Applied physics letters, Vol. 105, issue 18 (Nov. 2014) , art. 183111, ISSN 1077-3118

DOI: 10.1063/1.4901279

Publicat 5 p, 1.1 MB

Postprint 10 p, 800.8 KB

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