Physical model of the contact resistivity of metal-graphene junctions
Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Data:	2014
Resum:	While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.
Ajuts:	European Commission 604391 Ministerio de Economía y Competitividad MAT2012-33911 Ministerio de Economía y Competitividad TEC2012-31330
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Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Contact resistivities ; Electronic application ; Electronic device ; Insulator thickness ; Physical parameters ; Radio-frequency devices ; Specific contact resistivity ; Transfer Hamiltonian
Publicat a:	Journal of applied physics, Vol. 115, issue 16 (April 2014) , art. 164513, ISSN 1089-7550

DOI: 10.1063/1.4874181

Postprint 11 p, 213.0 KB

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