P-type ultrawide-band-gap spinel ZnGa2O4 : new perspectives for energy electronics
Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Sartel, Corinne. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Vilar, Christele (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia)
Belarre Triviño, Francisco Javier (Institut Català de Nanociència i Nanotecnologia)
Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia)
Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia)
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia)
Li, Lijie (Swansea University. College of Engineering)
Jennings, Mike (Swansea University. College of Engineering)
Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)

Data:	2020
Resum:	The family of spinel compounds is a large and important class of multifunctional materials of general formulation ABX with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGaO) arguably is the native p-type ternary oxide semiconductor with the largest E value (in comparison with the recently discovered binary p-type monoclinic β-GaO oxide). For nominally undoped ZnGaO the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 10 cm, while hole mobilities were found to be μ = 7-10 cm/(V s) (in the 680-850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGaO to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics.
Ajuts:	Ministerio de Economía y Competitividad JC-2015-25201 Ministerio de Economía y Competitividad ENE2015-74275-JIN Ministerio de Economía y Competitividad SEV-2017-0706
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Advanced applications ; High temperature ; Multi-functional materials ; P-type doping ; Spinel compounds ; Temperature range ; Ternary oxides ; Zinc gallate
Publicat a:	Crystal Growth and Design, Vol. 20 Núm. 4 (April 2020) , p. 2535-2546, ISSN 1528-7505

DOI: 10.1021/acs.cgd.9b01669

Postprint 43 p, 1.9 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats