Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Piros, Eszter (Technische Universität Darmstadt. Institute of Materials Science)
Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Kim, Taewook (Technische Universität Darmstadt. Institute of Materials Science)
Schreyer, Philipp (Technische Universität Darmstadt. Institute of Materials Science)
Gehrunger, Jonas (Technische Universität Darmstadt. Department of Electrical and Information Engineering (Alemanya))
Schwarz, Tobias (Technische Universität Darmstadt. Department of Electrical and Information Engineering (Alemanya))
Oster, Timo (Technische Universität Darmstadt. Department of Electrical and Information Engineering (Alemanya))
Hofmann, Klaus (Technische Universität Darmstadt. Department of Electrical and Information Engineering (Alemanya))
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Hochberger, Christian (Technische Universität Darmstadt. Department of Electrical and Information Engineering)
Alff, Lambert (Technische Universität Darmstadt. Institute of Materials Science)

Data:	2025
Resum:	We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associated with power dissipation. This happens because of the dynamical aspects of the set and reset transitions which are ultimately dictated by the physics of metal ions and oxygen vacancies migration. It is shown that by adding a constant base voltage to the voltage sweep, shorter programming times can be achieved but no significant impact on the power dissipation-energy consumption relationship is observed. Modeling and simulations are carried out with the aid of the Dynamic Memdiode Model and its implementation in LTspice using the Method of Elementary Solvers. Since the device model parameters and simulation conditions can vary in a wide range, the complete schematics are provided so that the interested readers can test different casuistries by themselves.
Ajuts:	Agencia Estatal de Investigación PID2022-139586NB-C41
Nota:	Altres ajuts: acords transformatius de la UAB
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Memristor ; Resistive switching ; Energy consumption ; Power dissipation ; SPICE ; LTspice
Publicat a:	IEEE transactions on nanotechnology, Vol. 24 (April 2025) , p. 205-208, ISSN 1941-0085

DOI: 10.1109/TNANO.2025.3556856

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