Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial HfZrO and Co
Zakusylo, Tetiana (Institut de Ciència de Materials de Barcelona)
Quintana Puebla, Alberto (Institut de Ciència de Materials de Barcelona)
Lenzi, Veniero (University of Aveiro)
Silva, José P. B. (University of Minho)
Marques, Luís (University of Minho)
Yano, José Luís Ortolá (Institut de Ciència de Materials de Barcelona)
Lyu, Jike (Institut de Ciència de Materials de Barcelona)
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona)
Fina, Ignasi (Institut de Ciència de Materials de Barcelona)

Data:	2024
Resum:	Magnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/ferromagnetic coupled films, are promising candidates for energy efficient memory computing. However, most of the multiferroic magnetoelectric systems studied so far are based on materials that are not compatible with industrial processes. Doped hafnia is emerging as one of the few CMOS-compatible ferroelectric materials. Thus, it is highly relevant to study the integration of ferroelectric hafnia into multiferroic systems. In particular, ferroelectricity in hafnia, and the eventual magnetoelectric coupling when ferromagnetic layers are grown atop of it, are very much dependent on quality of interfaces. Since magnetic metals frequently exhibit noticeable reactivity when grown onto oxides, it is expected that ferroelectricity and magnetoelectricity might be reduced in multiferroic hafnia-based structures. In this article, we present excellent ferroelectric endurance and retention in epitaxial HfZrO films grown on buffered silicon using Co as the top electrode. The crucial influence of a thin Pt capping layer grown on top of Co on the ferroelectric functional characteristics is revealed by contrasting the utilization of Pt-capped Co, non-capped Co and Pt. Magnetic control of the imprint electric field (up to 40% modulation) is achieved in Pt-capped Co/HfZrO structures, although this does not lead to appreciable tuning of the ferroelectric polarization, as a result of its high stability. Computation of piezoelectric and flexoelectric strain-mediated mechanisms of the observed magnetoelectric coupling reveal that flexoelectric contributions are likely to be at the origin of the large imprint electric field variation. Magnetoelectric composite multiferroic comprising ferroelectric doped HfO and ferromagnetic cobalt coupled films is demonstrated to be a promising candidate for energy efficient memory computing.
Ajuts:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00651 Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00804 Agencia Estatal de Investigación PID2019-107727RB-I00 Agencia Estatal de Investigación PID2020-112548RB-I00 Agencia Estatal de Investigación PDC2023-145874-I00 Agencia Estatal de Investigación PID2023-147211OB-C21 European Commission 101054687 Ministerio de Ciencia e Innovación CEX2019-000917-S Agencia Estatal de Investigación PID2020-116844RB-C21 Ministerio de Ciencia e Innovación TED2021-130453B-C22 Ministerio de Ciencia e Innovación TED2021-130453B-C21
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Publicat a:	Materials Horizons, Vol. 11, Issue 10 (May 2024) , p. 2388-2396, ISSN 2051-6355

DOI: 10.1039/d3mh01966g
PMID: 38441222

9 p, 2.3 MB

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