visitant ::
identificació
|
|||||||||||||||
Cerca | Lliura | Ajuda | Servei de Biblioteques | Sobre el DDD | Català English Español |
Pàgina inicial > Articles > Articles publicats > Large-signal model of graphene field-effect transistors. Part II : |
Data: | 2016 |
Resum: | This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. Specifically we have simulated a high-frequency performance amplifier, together with other circuits that take advantage of the ambipolarity of graphene, such as a frequency doubler, a radio-frequency subharmonic mixer and a multiplier phase detector. A variety of simulations comprising DC, transient dynamics, Bode diagram, S-parameters, and power spectrum have been compared with experimental data to assess the validity of the model. |
Ajuts: | European Commission 696656 Ministerio de Economía y Competitividad TEC2012-31330 Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Ambipolar electronics ; Compact model ; Field-effect transistor ; Graphene ; Intrinsic capacitance ; Circuit performance benchmarking ; Verilog-A |
Publicat a: | IEEE transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947, ISSN 1557-9646 |
Post-print 7 p, 921.0 KB |