Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device
Zhang, Meiyun (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))

Data:	2016
Resum:	The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO₂/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters' distributions and the CF resistance (R on). The CF of the Cu/HfO₂/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
Ajuts:	Ministerio de Ciencia y Tecnología TEC2012-32305 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	RRAM ; Conductive filament (CF) ; Structure evolution ; Monte Carlo simulator
Publicat a:	Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269, ISSN 1931-7573

DOI: 10.1186/s11671-016-1484-8
PMID: 27389343

6 p, 1.1 MB

El registre apareix a les col·leccions:
Articles > Articles de recerca
Articles > Articles publicats