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1.
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20 p, 4.7 MB |
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition
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Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pazos, Sebastián Matías (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We investigate the use and performance of the quasi-static memdiode model (QMM) when incorporated into large cross-point arrays intended for pattern classification tasks. Following Chua's memristive devices theory, the QMM comprises two equations, one equation for the electron transport based on the double-diode circuit with single series resistance and a second equation for the internal memory state of the device based on the so-called logistic hysteron or memory map. [...]
2020 -  10.1109/ACCESS.2020.3035638
IEEE Access, Vol. 8 (November 2020) , p. 202174-202193
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2.
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36 p, 4.9 MB |
Neural network based analysis of random telegraph noise in resistive random access memories
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González-Cordero, Gerardo (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ;
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ;
Morell Pérez, Antoni (Universitat Autònoma de Barcelona. Departament de Telecomunicació i Enginyeria de Sistemes) ;
Jiménez-Molinos, Francisco (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Roldán, Juan B. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores)
The characterization of random telegraph noise (RTN) signals in resistive random access memories (RRAM) is a challenge. The inherent stochastic operation of these devices, much different to what is seen in other electron devices such as MOSFETs, diodes, etc, makes this issue more complicated from the mathematical viewpoint. [...]
2020 - 10.1088/1361-6641/ab6103
Semiconductor science and technology, Vol. 35, issue 2 (Feb. 20200) , art. 025021
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3.
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14 p, 7.1 MB |
Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks
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Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Piros, Eszter (Technische Universität Darmstadt) ;
Kaiser, Nico (Technische Universität Darmstadt) ;
Vogel, Tobias (Technische Universität Darmstadt) ;
Petzold, Stephan (Technische Universität Darmstadt) ;
Gehrunger, Jonas (Technische Universität Darmstadt) ;
Oster, Timo (Technische Universität Darmstadt) ;
Hochberger, Christian (Technische Universität Darmstadt) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Alff, Lambert (Technische Universität Darmstadt) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this paper, the use of Artificial Neural Networks (ANNs) in the form of Convolutional Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode Model (DMM) to the conduction characteristics of bipolar-type resistive switching (RS) devices is investigated. [...]
2022 - 10.3390/mi13112002
Micromachines, Vol. 13, Issue 11 (November 2022) , art 2002
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4.
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24 p, 21.3 MB |
Assessment and improvement of the pattern recognition performance of memdiode-based cross-point arrays with randomly distributed stuck-at-faults
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Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pazos, Sebastián M. (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Morell Pérez, Antoni (Universitat Autònoma de Barcelona. Departament de Telecomunicació i Enginyeria de Sistemes) ;
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive crosspoint array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) intended for pattern recognition tasks is investigated by means of realistic SPICE simulations. [...]
2021 - 10.3390/electronics10192427
Electronics, Vol. 10, Issue 19 (October 2021) , art. 2427
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5.
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6 p, 6.4 MB |
SPICE modeling of cycle-to-cycle variability in RRAM devices
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Salvador Aguilera, Emili (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, we investigated how to include uncorrelated cycle-to-cycle (C2C) variability in the LTSpice quasi-static memdiode model for RRAM devices. Variability in the I-V curves is first addressed through an in-depth study of the experimental data using the fitdistrplus package for the R language. [...]
2021 - 10.1016/j.sse.2021.108040
Solid-state electronics, Vol. 185 (November 2021) , art. 108040
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6.
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8 p, 4.1 MB |
A flexible characterization methodology of RRAM : application to the modeling of the conductivity changes as synaptic weight updates
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Pedro, Marta (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, an automatic and flexible measurement setup, which allows a massive electrical characterization of single RRAM devices with pulsed voltages, is presented. The evaluation of the G-V maps under single-pulse test-schemes is introduced as an example of application of the proposed methodology, in particular for neuromorphic engineering, where the fine analog control of the synaptic device conductivity state is required, by inducing small changes in each learning iteration. [...]
2019 - 10.1016/j.sse.2019.03.035
Solid-state electronics, Vol. 159 (Sep. 2019) , p. 57-62
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7.
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18 p, 2.9 MB |
Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition
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Aguirre, Fernando Leonel (Universidad Tecnológica Nacional) ;
Gomez, Nicolás M. (Universidad Tecnológica Nacional) ;
Pazos, Sebastián Matías (Universidad Tecnológica Nacional) ;
Palumbo, Félix (Universidad Tecnológica Nacional) ;
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. [...]
2021 - 10.3390/jlpea11010009
Journal of low power electronics and applications, Vol. 11, Issue 1 (March 2021) , art. 9
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8.
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6 p, 1.1 MB |
Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device
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Zhang, Meiyun (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269
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9.
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30 p, 3.6 MB |
Conductance quantization in resistive random access memory
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Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ;
Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ;
Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ;
Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420
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10.
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17 p, 1.4 MB |
New high resolution random telegraph noise (RTN) characterization method for resistive RAM
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Maestro Izquierdo, Marcos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
González, M. B. (Institut de Microelectrònica de Barcelona) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. [...]
2016 - 10.1016/j.sse.2015.08.010
Solid-state electronics, Vol. 115, Part B (January 2016) , p. 140-145
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