Web of Science: 0 cites, Scopus: 3 cites, Google Scholar: cites
Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device
Zhang, Meiyun (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
Long, Shibing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
Li, Yang (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
Liu, Qi (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
Lv, Hangbing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Liu, Ming (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))

Data: 2016
Resum: The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO₂/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters' distributions and the CF resistance (R on). The CF of the Cu/HfO₂/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
Nota: Número d'acord de subvenció MCYT/TEC2012-32305
Nota: Número d'acord de subvenció AGAUR/2014SGR384
Drets: Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. Creative Commons
Llengua: Anglès.
Document: article ; recerca ; publishedVersion
Matèria: RRAM ; Conductive filament (CF) ; Structure evolution ; Monte Carlo simulator
Publicat a: Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269, ISSN 1931-7573

PMID: 27389343
DOI: 10.1186/s11671-016-1484-8


6 p, 1.1 MB

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