Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia)
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Data:	2017
Resum:	We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS system is found to maximize spin proximity effects compared to graphene on MoS, WSe, or MoSe with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications.
Ajuts:	European Commission 696656 Ministerio de Economía y Competitividad FIS2015-67767-P Ministerio de Economía y Competitividad SEV-2013-0295
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Matèria:	Graphene ; Proximity effects ; Spin Hall effect ; Spin transport ; Transition metal dichalcogenide ; Weak antilocalization
Publicat a:	Nano letters, Vol. 17, issue 8 (Sep. 2017) , p. 5078-5083, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.7b02364

Preprint 19 p, 1.3 MB

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