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Pàgina inicial > Articles > Articles publicats > Twin-induced InSb nanosails : |
Data: | 2016 |
Resum: | Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm²·V⁻¹·s⁻¹. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom. |
Ajuts: | Ministerio de Economía y Competitividad MAT2014-51480-ERC Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Cs-corrected scanning transmission electron microscopy ; Hall measurements ; III-V semiconductor ; Molecular beam epitaxy ; Nanowires ; Quantum point contact |
Publicat a: | Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833, ISSN 1530-6992 |
Post-print 32 p, 3.3 MB |